TK10A50D Datasheet (PDF) 0.1. Tk10a50d.pdf Size:197K toshiba. TK10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK10A50D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62 (typ.) High forward transfer admittance: Yfs = 5.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V. K10A600 - Vdss=600V, N Ch MOSFET - Toshiba, Circuit, Pinout, Schematic, Equivalent, Replacement, Data, Sheet, Manual and Application notes. You can datasheet PDF files download.
- Mosfet K10a60d Equivalent
- Mosfet K11a65d
- Mosfet K10a60d Datasheet
- Reemplazo De Mosfet K10a60d
- Transistor Mosfet K10a60d Datasheet
This is one of the MOSFET types. This is a kind of the transistor.
Part Number : K10A600
Function : Silicon N Channel MOSFET Type Transistor
Package : TO-220 Type
Manufacturers : Toshiba
Image :
( Correct PartNumber : K10A600 -> K10A60D )
Description :
Switching Regulator Applications
1. Low drain-source ON-resistance: RDS (ON)= 0.58 Ω(typ.)
2. High forward transfer admittance: |Yfs| = 6.0 S (typ.)
3. Low leakage current: IDSS= 10 μA(max)(VDS= 600 V)
4. Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)
K10A600 Pinout
Mosfet K10a60d Equivalent
Electrical Characteristics (Ta =25°C)
K10A600 Datasheet PDF
Other data sheets within the file : K10A60 , K10A60D, TK10A60D
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Part Number : K10A60W, TK10A60W
Function : Silicon N Channel MOS Type Field Effect Transistor
Package : TO-220 Type, SC-67 Type
Manufacturers : Toshiba
Image
Mosfet K11a65d
Description
1. Low drain-source on-resistance : RDS (ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS
Mosfet K10a60d Datasheet
2. Easy to control Gate switching
3. Enhancement-mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA)
K10A60W Pinout
Reemplazo De Mosfet K10a60d
Absolute Maximum Ratings (Ta = 25°C)
1. Drain-source voltage : VDSS = 600 V
2. Gate-source voltage : VGSS = ±30 V
3. Drain current (Continuous) : ID = 9.7 A
4. Drain current (Pulsed) : IDP = 38.8 A
5. Drain power dissipation (Tc = 25°C) : PD = 30 W
6. Single pulse avalanche energy : EAS = 69 mJ
7. Avalanche current : IAR = 4.9 A
8. Drain reverse current (Continuous) : IDR = 9.7 A
9. Drain reverse current (Pulsed) : IDRP = 38.8 A
10. Channel temperature : Tch = 150 °C
11. Storage temperature range : Tstg = -55 to 150 °C
12. Isolation voltage (t = 1.0s) : VISO(RMS) = 2000 V
13. Mounting torque : TOR = 0.6 N・m
Applications
Transistor Mosfet K10a60d Datasheet
1. Switching Voltage Regulators
K10A60W Datasheet
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